Aging rate of dielectric permittivity and loss for PMNPT based single crystals manufactured by continuous-feeding Bridgman with alternating current poling

Abstract

Aging rate (AR) of dielectric permittivity (¾33T/¾0) of ternary Pb(In1/2Nb1/2)O3Pb(Mg1/3Nb2/3)O3xPbTiO3 (PINPMNxPT, x = 26 and 30 mol %) and binary Pb(Mg1/3Nb2/3)O3xPbTiO3 (PMNxPT, x = 30 mol %) single crystals (SCs) grown by the continuous-feeding Bridgman method (CF-BM) were investigated. The AR of dielectric permittivity was 0.62.0 %/decade, whereas that of dielectric loss of the SCs was 18 %/decade. Even though the SC growth methods were different, the AR of CF-BM PMN30PT SCs were similar with that of conventional one-charge Bridgman method (OC-BM) SCs. In this work, the AR of the SCs possessing high ¾33T/¾0 more than 8000 by alternating current poling (ACP) was 4 to 7 times larger than that of PZT ceramics. It is noted that SCs with higher ¾33T/¾0 tend to exhibit higher AR. Given that the SCs were in an unstable state within 10 h after poling, the AR presented in this paper was calculated from 10 to 100 h after poling. We hope this work provides a new insight for evaluating the properties of the SCs and addresses the fact that SCs for piezoelectric devices should be properly selected by considering whether their AR could let them work normally during their entire lifetime.