Electric properties of BiFeO3 films deposited on LaNiO 3 by sol-gel process

Abstract

Sol-gel process was adopted to prepare BiFeO3 films. Pure phase BiFeO3 films were deposited on LaNiO3 coated Si (111) substrates at various annealing temperatures of 450-600 °C. The films annealed at 450-600 °C are (110) and (110) biaxis preferential oriented. Below 550 °C, the remnant polarization increases with the annealed temperature. The film annealed at 550 °C has the largest double remnant polarization of 12.8 μC/cm2. For the film annealed at 600 °C, small double remnant polarization of 2Pr=4.6 μC/cm2 was observed for its low breakdown electric field. Besides, the electric property is enhanced with the annealing temperature below 550 °C and it is deteriorated for the film annealed at 600 °C. Large dielectric constant and low leakage conduction were obtained by the improvement of preparation technology. © 2006 American Institute of Physics.