Copper phthalocyanine thin-film transistor with a polycarbonate gate dielectric layer

Abstract

We have investigated copper phthalocyanine (CuPc) thin-film transistors (TFTs) at different substrate temperatures. X-Ray diffraction (XRD) and UV/Vis spectrometer were used to study the orientations and optical transmission spectrum of the copper phthalocyanine film which was adopted as the semiconductor layer of organic thin-film transistor. A circuit diagram was constructed to study the output characteristics of CuPc TFT with a polycarbonate (PC) gate dielectric layer. The mobility of CuPc TFT at a substrate temperature of 90°C was 1.25 × 10-4 cm2/Vs. The On/Off ratio was also improved when the substrate temperature increases. Threshold voltages were - 17 V at a substrate temperature of 70°C and - 30 V at 90°C.