Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: Modeling and simulation versus measurement

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Abstract

This paper presents and discusses several methods for predicting the low-frequency (LF) noise at the output of a mm-wave detector. These methods are based on the extraction of LF noise source parameters from the single diode under a specific set of bias conditions and the transfer or conversion of these noise sources, under different operating conditions including cyclostationary regime, to the quasi-dc output of a mm-wave detector constructed with the same model of diode. The noise analysis is based on a conversion-matrix type formulation, which relates the carrier noisy sidebands of the input signal with the detector output spectrum through a pair of transfer functions obtained in commercial software. Measurements of detectors in individual and differential setups will be presented and compared with predictions.

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Gutiérrez, J., Zeljami, K., Villa, E., Aja, B., De La Fuente, M. L., Sancho, S., & Pascual, J. P. (2016, May 1). Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: Modeling and simulation versus measurement. International Journal of Microwave and Wireless Technologies. Cambridge University Press. https://doi.org/10.1017/S1759078715001518

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