We study the spin polarized thermoelectric effects on Fe|GaAs|Fe tunnel junction using a generalized Landauer-Büttiker formalism, where the energy flow is described on the same footing as the electric current. The Seebeck coefficient of tunnel junction will change sign as the GaAs thickness increases. We demonstrate the thermally induced STT on Fe|GaAs|Fe tunnel junction is robust against the interfacial defects and is non-negligible. © 2012 Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.
CITATION STYLE
Jia, X., & Xia, K. (2012). Thermal electric effects in Fe|GaAs|Fe tunnel junctions. AIP Advances, 2(4). https://doi.org/10.1063/1.4773464
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