Reductions of implantation induced defects and leakage current by annealing in NH3/N2atmosphere for Mg- and N-implanted GaN

Abstract

We demonstrate the advantage of post-implantation annealing (PIA) in NH3/N2 for a p-n diode (PND) fabricated by the implantation of Mg and N ions into an n-type GaN layer by comparison with that annealed in N2. The leakage current for the PND with a reverse bias was lower in the case of NH3/N2 annealing. The cathodoluminescence spectrum measured for NH3/N2 annealing indicated a reduction in the densities of non-radiative recombination centers and nitrogen vacancy complexes. PIA in NH3/N2 is thus effective to suppress the density of implantation induced defects as leakage current sources.