Memristive devices based on 2D-BiOI nanosheets and their applications to neuromorphic computing

Abstract

Memristors are considered to being one of the key devices that are expected to break through traditional von-Neumann computing architectures and are used to simulate bio-synapse in neural computing networks. In this work, we fabricated a high quality two-dimensional BiOI (2D-BiOI) nanosheet film by the hydrolysis method and constructed a Ti/2D-BiOI/FTO memristor. Meanwhile, the typical resistive switching characteristics and the functions of biomimetic synapses of the device were studied. The devices exhibit about +1.17/-1.62 V SET/RESET voltages, over 1.4 × 104 s retention, and excellent anti-fatigue properties. Simultaneously, the learning and memory functions, such as spiking-time-dependent plasticity, paired pulse facilitation, short-term plasticity, and short-term plasticity, might be simulated. The resistance switching mechanism is believed to be mainly related to the formation and destruction of oxygen vacancy filament channels by the analysis of XPS depth profiling. The device based on 2D-BiOI films possesses promising potential application in neuromorphic chip systems.