Abstract
We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAsGaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5 μm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1 AW. Detectivity was measured around 109 cm Hz12 W at room temperature and 1.5× 1013 cm Hz12 W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier-Stark oscillations in the Zener tunneling current were observed up to room temperature. © 2005 American Institute of Physics.
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CITATION STYLE
Wei, Y., Hood, A., Yau, H., Gin, A., Razeghi, M., Tidrow, M. Z., & Nathan, V. (2005). Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range. Applied Physics Letters, 86(23), 1–3. https://doi.org/10.1063/1.1947908
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