The oxidation of thin films of tin at room temperature in an atmosphere containing 10% H2S and 90% air has been studied by measuring the changes in resistance of thin films. Morphological studies have also been carried out using optical and scanning electron microscopes. Reaction kinetics change from logarithmic law at ordinary atmospheres to a power law in the presence of H2S. The basis of formation of sulphide along with the oxide is explained, the former growing on a lower layer and the latter on an upper layer. © 1984 Indian Academy of Sciences.
CITATION STYLE
Muneera, C. I., & Unnikrishnan Nayar, V. (1984). Oxidation of thin films of tin at room temperature in hydrogen sulphide atmosphere. Bulletin of Materials Science, 6(6), 1019–1027. https://doi.org/10.1007/BF02743951
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