Polishing Process Simulation of SiO2 by CeO2 Abrasive Grain under Wet Environment

  • OZAWA N
  • ISHIKAWA M
  • NAKAMURA M
  • et al.
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Abstract

CeO 2 砥粒による Wet 環境下での SiO 2 の 研磨加工シミュレーション 尾澤伸樹・石川宗幸・中村美穂・久保百司 東北大学大学院工学研究科附属エネルギー安全科学国際研究センター 〠 980-8579 宮城県仙台市青葉区荒巻字青葉 6-6-11 (2012 年 3 月 12 日受付;2012 年 4 月 9 日掲載決定) A chemical mechanical polishing (CMP) mechanism of a glass surface by a CeO2 abrasive grain under water environment has not been elucidated because the CMP process is complicated combination of chemical reactions and mechanical polishing. In this review, we introduce our successful clarification of the CMP mechanism by computational simulation methods. First, we revealed that the oxygen defects in the CeO2 abrasive grains lead to the generation of exposed Ce 3+ atoms on the CeO2 surface and then the chemical reactions of the exposed Ce 3+ atom and the glass surface make the elongation of Si-O bonds. We also clarified that H2O molecules react with the above elongated Si-O bonds and then the Si-O bonds are dissociated. These chemical reactions are suggested to soften the glass surface and enhance the mechanical polishing. Furthermore, according to the above clarified CMP mechanism, we succeeded to propose the design principles for the alternative materials of CeO2 abrasive grains.

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APA

OZAWA, N., ISHIKAWA, M., NAKAMURA, M., & KUBO, M. (2012). Polishing Process Simulation of SiO2 by CeO2 Abrasive Grain under Wet Environment. Hyomen Kagaku, 33(6), 351–356. https://doi.org/10.1380/jsssj.33.351

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