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Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories (Nanotechnology (2020) 31 (445205) DOI: 10.1088/1361-6528/aba6b4)

Nanotechnology
DOI: 10.1088/1361-6528/abb301
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Abstract

Due to an error in the production an incorrect figure 3 was published. The correct figure 3 is published herein. (Figure Presented).

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Beilliard, Y., Paquette, F., Brousseau, F., Ecoffey, S., Alibart, F., & Drouin, D. (2020, December 4). Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories (Nanotechnology (2020) 31 (445205) DOI: 10.1088/1361-6528/aba6b4). Nanotechnology. IOP Publishing Ltd. https://doi.org/10.1088/1361-6528/abb301

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