Investigating the effect of chirality, oxide thickness, temperature and channel length variation on a threshold voltage of MOSFET, GNRFET, and CNTFET

Abstract

Scaling down of CMOS in Nano meter range has many difficulties such as high leakage current, smaller gate control, high power consumption, high density, a wide range of interconnect net. Carbon Nanotube Field Effect Transistor (CNTFET) and Graphene Nanoribbon Field Effect Transistor (GNRFET) are the promising and effective technologies for advanced circuit design and implementation to overcome the difficulties faced in CMOS technology. In this work, analyzed the different device physical structure such as MOSFET, GNRFET, and CNTFET by varying different device parameters like chirality, oxide thickness, channel length, and temperature. Effect of a threshold voltage and device performance has been observed by varying all these device parameters. The simulation shows that advanced GNRFET and CNTFET can work effectively for nano dimensions due to the little variation of a threshold voltage. These devices may also consume less power due to the less leakage current and operating with higher speed due to the ballistic transport of electrons compared to the MOSFET device. All the simulation has done with HSPICE at 32nm technology node.