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Scaling of nano-Schottky-diodes

Applied Physics Letters (2002) 81(20) 3852-3854
DOI: 10.1063/1.1521251
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Abstract

The potential barrier shape in ultrasmall Schottky diodes was investigated. It was shown that for diodes smaller than a characteristic length the Schottky barrier thickness decreases with decreasing diode size. Therefore, the resistance of the diode is strongly reduced due to enhanced tunneling.

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Smit, G. D. J., Rogge, S., & Klapwijk, T. M. (2002). Scaling of nano-Schottky-diodes. Applied Physics Letters, 81(20), 3852–3854. https://doi.org/10.1063/1.1521251

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