Ferroelectric properties, morphologies, and leakage currents of Bi 0.97La0.03FeO3 thin films deposited on indium tin oxide/glass substrates

Abstract

Bi0.97 La0.03 FeO3 (BLFO) films were prepared using the metal organic decomposition method on indium tin oxide (ITO)/glass substrates. Ferroelectric properties, morphologies and leakage currents of BLFO thin fims are very sensitive to the annealing temperature. The content of grain boundaries in the films is considered to be the dominant factor affecting the leakage currents in BLFO films. Well saturated P-E hysteresis loops can be obtained from all BLFO films due to their low leakage currents. The BLFO thin film annealed at 525 °C exhibits the highest remanent polarization (Pr ≈72.9 μC/ cm2), which can be explained by the high relative intensity of (110) peak. © 2008 American Institute of Physics.