Design of trench gate GaN Power MOSFET using Al2O3 gate oxide

Abstract

A trench gate type 600V GaN power MOSFET structure with Al 2O3 gate oxide has been designed and simulated for obtaining optimum device and process parameters for fabrication. As a result, when the trench gate depth is 2.4 μm, the breakdown voltage is 620V and the on resistance is 0.4Ωcm2, which is relatively very low on resistance comparing with the same trench gate Si power MOSFET structure. © Published under licence by IOP Publishing Ltd.