B0.1In0.9P Quantum Dot Semiconductor Optical Amplifiers

Abstract

The modal gain of the undoped and doped B0.1In0.9P/GaP and B0.1In0.9P/BP quantum dot (QD) structures are studied due to their importance, especially in Si-based devices. The first structure has three peaks, while the second structure has two peaks, where the first excited state (ES) peak is contained in the ground state (GS) one. The second ES peak is the highest for both structures. The B0.1In0.9P/GaP structure has a dip absorption results from the fourth state transition, peaked at 765nm wavelength and covers the wavelength spectrum 600-2480nm. The modal gain of B0.1In0.9P/BP QD structure doubles the other structure, peaked at 775nm, and its spectrum covers 600-1360nm. The difference in the bandwidth of their spectra comes from the bandgap difference of their barriers. In both structures, doping changes the spectrum from absorption to gain, indicating its high importance in increasing gain. For these two structures as QD semiconductor optical amplifiers (QDSOAs), the signal gain is increased by two orders compared to Sb-based QDSOAs and by one order compared to InGaAs/GaAs QDSOAs.