Room-temperature ferromagnetism in novel Mn-doped ZnSiAs2 chalcopyrite

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Abstract

Based on Mn-doped chalcopyrite ZnSiAs2 the new dilute magnetic semiconductor with p-type conductivity was produced. The Curie temperature behaviour of the produced semiconductor is distinctly dependent on the Mn concentration: 325 K for 1 wt.% and 337 K for 2 wt.% of Mn, consequently. Magnetization, electrical resistance, magnetic resistance and Hall effect of mentioned compositions were studied. Temperature dependence of magnetization M(T) have complicate behaviour. For T ≤ 15 K the M(T) dependence is characteristic for superparamagnetic and at T > 15 K magnetization is sum of magnetizations of ensemble of superparamagnetic clusters and ferromagnetic phase contained frustration regions. © 2009 IOP Publishing Ltd.

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Marenkin, S. F., Novotortsev, V. M., Fedorchenko, I. V., Varnavskiy, S. A., Koroleva, L. I., Zashchirinskii, D. M., … Kilanski, L. (2009). Room-temperature ferromagnetism in novel Mn-doped ZnSiAs2 chalcopyrite. Journal of Physics: Conference Series, 153. https://doi.org/10.1088/1742-6596/153/1/012058

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