Schottky–Mott Limit: Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit (Adv. Mater. 24/2019)

  • LaGasse S
  • Dhakras P
  • Watanabe K
  • et al.
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Abstract

For many years, metal–semiconductor interfaces have suffered from defective interfaces, causing their energy band alignment to diverge from the Schottky–Mott rule. The van der Waals interface between graphene and transition metal dichalcogenide WSe 2 takes the Schottky–Mott rule from the textbook to the laboratory. Because of the lack of Fermi‐level pinning, in article number 1901392, Samuel W. LaGasse, Ji Ung Lee, and co‐workers achieve perfect tuning of the graphene–WSe 2 Schottky barrier.

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LaGasse, S. W., Dhakras, P., Watanabe, K., Taniguchi, T., & Lee, J. U. (2019). Schottky–Mott Limit: Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit (Adv. Mater. 24/2019). Advanced Materials, 31(24). https://doi.org/10.1002/adma.201970169

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