Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

Abstract

The authors have demonstrated a n -type GaAs depletion-mode metal-oxide-semiconductor field-effect Transistor with normalized transconductance gm of 266 mSmm, peak electron mobility of 1124 cm2 V-1 s-1, and low hysteresis. The good device characteristics are attributed to the use of amorphous silicon interface passivation layer and Hf O2 gate dielectric. The pulse Id - Vg characteristics show that even higher channel mobility (>2000 cm2 V-1 s-1) can be achieved by reducing the interfacial and bulk traps in the gate stack. © 2007 American Institute of Physics.