GaInP/AlInP(001) Interfaces from Density Functional Theory

Abstract

The band alignment and the electronic states at the GaInP/AInP(001) interface are explored with (hybrid) density functional theory. Thereby, CuPt-type ordered crystals are focused. For the most stable interface, valence and conduction band offsets of 0.04 and −0.58 eV, respectively, are predicted. No interface states occur within the fundamental gap. Generally, the results support the validity of natural band offsets and demonstrate a minor influence of strain and local bonding scenarios on the band alignment.