In article number 1704796, Yi-Hsien Lee and co-workers report the synthesis of in-plane artificial lattices of monolayer multijunctions with multistep chemical vapor deposition (CVD) processes. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of the in-plane artificial lattices of these WS2/WSe2/MoS2 multijunctions at reduced growth temperatures. This synthesis method opens a new avenue toward low-dimensional channels and artificial lattices of diverse material genomes.
CITATION STYLE
Chiu, K., Huang, K., Chen, C., Lai, Y., Zhang, X., Lin, E., … Lee, Y. (2018). Monolayer Multijunctions: Synthesis of In‐Plane Artificial Lattices of Monolayer Multijunctions (Adv. Mater. 7/2018). Advanced Materials, 30(7). https://doi.org/10.1002/adma.201870043
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