Numerical analysis of turn-off behavior of IGBT with an inductive load

Abstract

This paper presents a numerical study for turn-off characteristics of IGBTs with an inductive load. Precise analyses are done for loss dissipation mechanism in both the storage and the tail region with being confirmed by experiments. The results show that the promising procedure, which means the optimum resistivity of higher n- base layer despite of the medium rated voltage, e.g.600V, and extremely lower n+ buffer layer, leads to an improved loss dissipation characteristics. And based on this results, the high performance IGBTs are successfully fabricated without lifetime killer.