Abstract
An overview is presented of the hybrid AlGa-InAs-silicon platform that enables wafer level integration of III-V optoelectronic devices with silicon photonic devices based on silicon-on-insulator (SOI). Wafer bonding AlGaInAs quantum wells to an SOI wafer allows large scale hybrid integration without any critical alignment steps. Discrete hybrid silicon optical amplifiers, lasers and photodetectors are described, and the integration of a ring laser with on-chip and photo-detector and amplified spontaneous emission (ASE) seed to enable unidirectional lasing.
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CITATION STYLE
Jones, R., Park, H. D., Fang, A. W., Bowers, J. E., Cohen, O., Raday, O., & Paniccia, M. J. (2009). Hybrid silicon integration. In Journal of Materials Science: Materials in Electronics (Vol. 20). https://doi.org/10.1007/s10854-007-9418-y
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