Effect of temperature jump on nonequilibrium entropy generation in a MOSFET transistor using dual-phase-lagging model

Abstract

This paper investigates the effect of temperature-jump boundary condition on nonequilibrium entropy production under the effect of the dual-phase-lagging (DPL) heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field effect transistor (MOSFET). The transient DPL model is solved using finite element method. Also, the influences of the governing parameters on global entropy generation for the following cases-(I) constant applied temperature, (II) temperature-jump boundary condition, and (III) a realistic MOSFET with volumetric heat source and adiabatic boundaries-are discussed in detail and depicted graphically. The analysis of our results indicates that entropy generation minimization within a MOSFET can be achieved by using temperature-jump boundary condition and for low values of Knudsen number. A significant reduction of the order of 85% of total entropy production is observed when a temperature-jump boundary condition is adopted.