Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

Abstract

Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of 1/430 cm 2 V '1 s͉'1, on/off ratio of 10 3 -10 4, switching current >100 1/4A, transconductance >50 1/4S and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays.