Peculiarities of the synthesis of GST films by magnetron sputtering for nonvolatile optical memory cells

Abstract

The structure and optical properties of thin films of the chalcogenide semiconductor Ge2Sb2Te5, deposited by magnetron sputtering, was studied. A significant change in the topology and optical properties of the films is demonstrated with varying deposition conditions. It is shown that an increase in the deposition time leads to an increase in the surface roughness. Doping with nitrogen during deposition leads to a smoothing of the film surface, and also provides a strong change in the band structure and optical properties.