Crystallization study of "melt quenched" amorphous GeTe by transmission electron microscopy for phase change memory applications

Abstract

In situ transmission electron microscopy (TEM) observations were performed for a better understanding of the "melt quenched" GeTe crystallization mechanism. The evolution of the crystallite morphology observed during annealing shows a growth-dominated crystallization behavior. Scanning transmission electron microscopy-electron dispersive x-ray spectroscopy and high resolution electron microscopy experiments were also performed on cycled GeTe devices, showing that void formation is responsible for the cell failure after 10 7 cycles. © 2011 American Institute of Physics.