Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions

Abstract

Resonant photoluminescence experiments have been performed on self-assembled quantum dots. The emission bands measured in the investigated samples can be deconvoluted in several Gaussian components, which could be related to different size families of dots. The experimental results reveal the importance of GaAs phonons for the carrier relaxation of excess energy, specially for the sample with low dot density. With increasing temperature, electrons from smaller dots can be activated to reach the wetting layer electron states, from which they can be trapped at larger dots (below 100 K) or escape to the GaAs barriers (above 100 K).