Abstract
The band gap energy Eg in silicon was found by exploiting the linear relationship between the temperature and voltage for the constant current in the temperature range of 275 K to 333 K. Within the precision of our experiment, the results obtained are in good agreement with the known value energy gap in silicon. The temperature dependence of Eg for silicon has also been studied.
Cite
CITATION STYLE
APA
Low, J., Kreider, M., Pulsifer, D., Jones, A., & Gilani, T. (2008). Band Gap Energy in Silicon. American Journal of Undergraduate Research, 7(1). https://doi.org/10.33697/ajur.2008.010
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