Resistive switching characteristics in TiOLaAlOheterostructures sandwiched in Pt electrodes

Abstract

TiOLaAlO(TiOLAO) heterostructures have been deposited on Pt/TiOSiOSi substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiOLAO/Pt have been studied and discussed in comparison with those of Pt/TiOPt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.