We have studied damaging behaviors in bulk As2Se3, Se and As2S3 glasses using fs and ns laser pulses. Threshold fluence of laser damages markedly varies with excitations and materials. Under sub-gap fs pulses with photon-energy of ħω = 1.6 eV, the threshold in As2S3 is roughly twice that of the other two glasses, and photo-crystallization appears in Se. For ns pulses, all the glasses under bandgap (ħω = 2.3 eV) illumination possess higher thresholds than those under mid-gap (ħω = 1.2 eV) illumination. These observations are discussed, taking electronic and thermal effects into account.
CITATION STYLE
Li, Q., Qi, D., Wang, X., Shen, X., Wang, R., & Tanaka, K. (2019). Femto- And nano-second laser-induced damages in chalcogenide glasses. Japanese Journal of Applied Physics, 58(8). https://doi.org/10.7567/1347-4065/ab3368
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