Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

  • Tong L
  • Liu T
  • Liang R
  • et al.
N/ACitations
Citations of this article
12Readers
Mendeley users who have this article in their library.

Abstract

The layered structure of transition metal dichalcogenides (TMDs) gives rise to many novel properties for functional applications in a wide range of fields. However, successful synthesis of TMDs and directly modulating properties of TMDs during the growth process are facing great challenges, which limits their future practical applications. In this review, we focus on current state of the art chemical vapor deposition (CVD) synthesis of TMDs alloys, convenient methods to modulate properties of TMDs by CVD. Then, TMDs-based lateral and vertical heterostructures utilizing CVD methods are reviewed. Finally, we summarize patterned growth of TMDs briefly.

Cite

CITATION STYLE

APA

Tong, L., Liu, T., Liang, R., Wang, S., Chen, J., Dai, J., … Ye, L. (2017). Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition. General Chemistry, 3(4), 182–193. https://doi.org/10.21127/yaoyigc20170014

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free