Abstract
A thorough investigation of the pseudomorphic HEMTs was carried out by investigating the effect of the position of the donor layer and/or doping profile in the channel on the device performance. The PM structure's transport properties and presence of interface and bulk traps were investigated. The transistor microwave performance was measured and transconductance was compared for the various transistors. For relaxed geometry HEMTs a typical transconductance of 280mS/mm was measured. © 1990.
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CITATION STYLE
Papaioannou, G., Roditi, E., Michelakis, C., Martin, E., Hatzopoulos, Z., Papastamatiou, M., … Christou, A. (1990). Pseudomorphic InGaAs HEMTs on GaAs substrates with undoped and doped channels. Superlattices and Microstructures, 8(3), 341–344. https://doi.org/10.1016/0749-6036(90)90260-E
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