Coupled electro-thermal simulations of single event burnout in power diodes

Abstract

Power diodes may undergo destructive failures when they are struck by high-energy particles during the off state (high reverse-bias voltage). This paper describes the failure mechanism using a coupled electro-thermal model. The specific case of a 3500-V diode is considered and it is shown that the temperatures reached when high voltages are applied are sufficient to cause damage to the constituent materials of the diode. The voltages at which failure occurs (e.g., 2700 V for a 17-MeV carbon ion) are consistent with previously reported data. The simulation results indicate that the catastrophic failures result from local heating caused by avalanche multiplication of ion-generated carriers. © 2005 IEEE.