Effect of carrier gas flow field on chemical vapor deposition of 2d mos2 crystal

Abstract

The carrier gas flow field plays a vital role in the chemical vapor deposition (CVD) process of two dimensional (2D) MoS2 crystal, which was studied by simulations and experiments. Different carrier gas flow fields were studied by utilizing three types of precursor carrier which affected the local gas flow field significantly. The experiment results showed that the appropriate precursor vapor concentration could be achieved by local carrier gas flow field conditioning, resulting in single 2D MoS2 crystals of a large size and a high coating rate of 2D MoS2 crystal on the target substrate surface. The carrier gas flow also contributed to the growth of the 2D MoS2 crystal when it flew towards the target surface. The size of deposited single 2D MoS2 crystal reached tens of micrometers and a few layers of 2D MoS2 crystal were characterized and confirmed.