Abstract
We investigate the structural and morphological evolutions of Ge1-x Mnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature TG ∼160 °C), Mn atoms incorporated in the matrix increases with x up to a concentration m∼0.03. Magnetic properties of the samples are mainly related to Ge3 Mn5 cluster phase, while transport properties are connected to Ge:Mn matrix. © 2007 American Institute of Physics.
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CITATION STYLE
Ayoub, J. P., Favre, L., Berbezier, I., Ronda, A., Morresi, L., & Pinto, N. (2007). Morphological and structural evolutions of diluted Ge1-x Mnx epitaxial films. Applied Physics Letters, 91(14). https://doi.org/10.1063/1.2794723
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