Abstract
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm 2 are reported. Results of the integration with NiO based switching memory elements are also shown. ©2009 IEEE.
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Tallarida, G., Huby, N., Kutrzeba-Kotowska, B., Spiga, S., Arcari, M., Csaba, G., … Bez, R. (2009). Low temperature rectifying junctions for crossbar non-volatile memory devices. In 2009 IEEE International Memory Workshop, IMW ’09. https://doi.org/10.1109/IMW.2009.5090598
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