Abstract
The author discuss the design, fabrication, and application of optically activated switches. A 0.25-mm-thick Si pin diode, 3.0 mm in diameter, was tested using an 808-nm 2-D diode laser array measuring about 2 mm × 5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon activation with 200 W of optical power (the pulse width was 10 μs). The same device, while being pulse-biased to 2.0 kV, has demonstrated 20-A pulses (100-ns pulse width) with less than 10 ns risetime. The laser peak power was 500 W.
Cite
CITATION STYLE
Rosen, A., Stabile, P., Janton, W., Gombar, A., McShea, J., Buckingham, R. A., … Bahasadri, A. (1988). Optically activated pin diode switch. IEEE Conference Record of Power Modulator Symposium, 223–226. https://doi.org/10.1109/modsym.1988.26273
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