Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H-SiC p-i-n diodes

Abstract

The influence of basal-plane dislocation (BPD) depth on the expansion of single Shockley-type stacking faults (1SSFs) was investigated during the forward-current degradation of 4H-SiC p-i-n diodes. The 1SSF expanded from the BPD converted into a threading edge dislocation (TED) in the substrate. The hole density that was injected into the substrate increased with the stress-current density; therefore, BPDs converted into TEDs at a greater depth caused the expansion of 1SSFs under higher stress-current density.