Local structure analysis on Si-containing DLC films based on the measurement of C K-Edge and Si K-Edge X-ray absorption spectra

Abstract

In this paper, the local structure of silicon-containing diamond-like carbon (Si-DLC) films is discussed based on the measurement of C K-edge and Si K-edge near-edge x-ray absorption fine structure (NEXAFS) spectra using the synchrotron radiation of 11 types of Si-DLC film fabricated with various synthesis methods and having different elemental compositions. In the C K-edge NEXAFS spectra of the Si-DLC films, the * band shrunk and shifted to the lower-energy side, and the * peak broadened with an increase in the Si content in the Si-DLC films. However, there were no significant changes observed in the Si K-edge NEXAFS spectra with an increase in the Si content. These results indicate that Si-Si bonding is not formed with precedence in Si-DLC film.