Abstract
The radiation response of four different high-k materials has been investigated by irradiating them using a 979 MBq Cs137 γ-ray source and a dose absorption rate of 0.71rad(Si)∕s. Acceptorlike electron traps and donorlike traps were observed in HfO2 and ZrO2 metal-oxide-semiconductor capacitors originating from radiation-induced defects. A lower density of donor-like traps were created in LaAlO3 and NdAlO3 capacitors, but both electron and hole trapping play a role in shifting the flat band voltage. The radiation hardness of the LaAlO3 and NdAlO3 thin films is similar to thermal SiO2 but better than the HfO2 and ZrO2.
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CITATION STYLE
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-k materials and their response to gamma ray radiation. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 27(1), 411–415. https://doi.org/10.1116/1.3071848
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