LOW-ENERGY, ULTRAHIGH VACUUM, SOLID-METAL ION SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR BEAM EPITAXY.

Abstract

The design and operation of a compact single-grid, ultrahigh-vacuum-compatible, low-energy ion gun capable of utilizing gaseous, liquid, or solid source material are described. The gun can provide greater than 100 mu A/cm**2 at ion energies ranging from 20 to 500 ev. In initial experiments for accelerated-ion doping of (100)Si and (100)GaAs, several orders of magnitude increases in elemental As and Zn incorporation probabilities were observed.