Abstract
Single-quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light-matter interactions and a low-loss interface between emitters and optical fields. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we develop a heterogeneous photonic integration platform that provides such capabilities in a scalable on-chip implementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots-A mature class of solid-state quantum emitter-with low-loss Si3N4 waveguides. We demonstrate a highly efficient optical interface between Si3N4 waveguides and single-quantum dots in GaAs geometries, with performance approaching that of devices optimized for each material individually. This includes quantum dot radiative rate enhancement in microcavities, and a path for reaching the non-perturbative strong-coupling regime.
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CITATION STYLE
Davanco, M., Liu, J., Sapienza, L., Zhang, C. Z., De Miranda Cardoso, J. V., Verma, V., … Srinivasan, K. (2017). Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices. Nature Communications, 8(1). https://doi.org/10.1038/s41467-017-00987-6
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