Epitaxial GaN nanotripods: Morphology and crystal structure

Abstract

The goal of this work is to study the morphology and crytal structure of novel GaN epitaxial nanostructures (Y-shape nanotripods) grown on silicon (111) by plasma assisted molecular beam epitaxy (PA-MBE). Prior to the nanowire synthesis epitaxial GaN nanoparticles were formed on the Si(111) via nitridation of Ga nanodroplets on Si substrate surface (droplet epitaxy technique). Effect of the seeding layer on futher nanostructure growth, GaN/Si heterointerface formation, crystal structure and morphology is studied by use of different microscopic techniques.