Structure and optical properties of ZnO nanowires fabricated by pulsed laser deposition on GaN/Si(111) films with the use of Au and NiO catalysts

Abstract

The growth of ZnO nanowires on a Si(111) substrate with a GaN buffer layer by pulsed laser deposition at a high argon pressure and with the use of Au and NiO catalysts has been investigated. Application of the low-temperature NiO catalyst makes it possible to reduce the optimal growth temperature from 900°C (in the case of the Au catalyst) to T = 570°C and grow ZnO nanowires 20 nm in diameter, which are highly-oriented in the direction of the c lattice axis and completely free of dislocations. © Allerton Press, Inc. 2008.