Abstract
We propose a novel nLDMOS structure and a design concept in BCD technology with the best-in-class performance. The drift profile is optimized and the multi-oxide in the drift region is adopted to approach the RESURF limit of on-resistance vs. BVdss characteristic (i.e., 36V DMOS has a Ron-sp of 20mohm-mm2 with a BVdss of 50V; 45V DMOS has a Ron-sp of 28mohm-mm2 with a BVdss of 65V). Moreover, this modification requires merely three extra masks in the Non-Epitaxy LV process to achieve this improvement. Therefore it is not only a high performance but also a low cost solution. © 2014 IEEE.
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CITATION STYLE
Huang, T. Y., Liao, W. Y., Yang, C. Y., Huang, C. H., Yeh, W. C. V., Huang, C. F., … Chang, K. C. (2014). 0.18um BCD technology with best-in-class LDMOS from 6 v to 45 v. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 179–181). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISPSD.2014.6856005
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