Abstract
We demonstrate the fabrication and operation of an AlGaAs surface-emitting semiconductor laser, grown by molecular-beam epitaxy, that incorporates a circularly symmetric grating of period Λ=0.25 μm fabricated using electron-beam lithography. Azimuthal variations in the grating linewidth have a significant impact on the spatial modes of the laser.
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CITATION STYLE
APA
Erdogan, T., King, O., Wicks, G. W., Hall, D. G., Dennis, C. L., & Rooks, M. J. (1992). Spatial modes of a concentric-circle-grating surface-emitting, AlGaAs/GaAs quantum well semiconductor laser. Applied Physics Letters, 60(15), 1773–1775. https://doi.org/10.1063/1.107211
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