Atomic-scale analyses of Nb 3 Sn on Nb prepared by vapor diffusion for superconducting radiofrequency cavity applications: A correlative study

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Abstract

We report on atomic-scale analyses of the microstructure of an Nb 3 Sn coating on Nb, prepared by a vapor diffusion process for superconducting radiofrequency (SRF) cavity applications using transmission electron microscopy, electron backscatter diffraction and first-principles calculations. Epitaxial growth of Nb 3 Sn on a Nb substrate is found and four types of orientation relationships (ORs) at the Nb 3 Sn/Nb interface are identified by electron diffraction or high-resolution scanning transmission electron microscopy (HR-STEM) analyses. Thin Nb 3 Sn grains are observed in regions with a low Sn flux and they have a specific OR: Nb 3 Sn //Nb and Nb 3 Sn //Nb The Nb 3 Sn/Nb interface of thin grains has a large lattice mismatch, 12.3%, between Nb and Nb 3 Sn (002) and a high density of misfit dislocations as observed by HR-STEM. Based on our microstructural analyses of the thin grains, we conclude that the thin regions are probably a result of a slow interfacial migration with this particular OR. The Sn-deficient regions are seen to form initially at the Nb 3 Sn/Nb interface and remain in the grains due to the slow diffusion of Sn in bulk Nb 3 Sn. The formation of Sn-deficient regions and the effects of interfacial energies on the formation of Sn-deficient regions at different interfaces are estimated by first-principles calculations. The finding of ORs at the Nb 3 Sn/Nb interface provides important information about the formation of imperfections in Nb 3 Sn coatings, such as large thin-regions and Sn-deficient regions, which are critical to the performance of Nb 3 Sn SRF cavities for accelerators.

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Lee, J., Posen, S., Mao, Z., Trenikhina, Y., He, K., Hall, D. L., … Seidman, D. N. (2019). Atomic-scale analyses of Nb 3 Sn on Nb prepared by vapor diffusion for superconducting radiofrequency cavity applications: A correlative study. Superconductor Science and Technology, 32(2). https://doi.org/10.1088/1361-6668/aaf268

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