Top-gate organic field-effect transistors with high environmental and operational stability

Abstract

Top-gate organic field-effect transistors are demonstrated using a bilayer gate dielectric to propose a new compensation mechanism which leads to high operational stability. Neither changes in mobility nor threshold voltage changes are observed after 20 000 cycles of the transfer characteristics or after 24 hours under constant direct-current bias stress. We also demonstrate that these OFETs are air stable up to 210 days. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.