Filling of In(Ga)P/GaInP quantum dot electron states detected by microphotoluminescence

A. Yu Romanova; K. G. Belyaev; P. A. Buriak; A. S. Vlasov; N. A. Kalyuzhnyy; S. A. Mintairov; R. Salii; D. V. Lebedev; M. V. Rakhlin; V. I. Smirnov; A. A. Toropov; A. A. Bogdanov; S. Ramezanpour; A. M. Mintairov

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Filling of In(Ga)P/GaInP quantum dot electron states detected by microphotoluminescence

Journal of Physics: Conference Series (2019) 1400(7)

DOI: 10.1088/1742-6596/1400/7/077013

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Abstract

Microphotoluminescence (μPL) spectra of single In(Ga)P/GaInP quantum dots (QD) were investigated. Measurements were carried out at different optical pump power and at different electric field with constant optical pump. Filling of electron s-, p-, d-states was observed. Quantum confinement Stark effect (QCSE) was detected. Obtained PL life times of s-, p-electron states were 0.5 ns and 0.4 ns respectively. From spectra it is clearly seen that QDs have weak quantum confinement (hω0 ∼4-8meV).

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Romanova, A. Y., Belyaev, K. G., Buriak, P. A., Vlasov, A. S., Kalyuzhnyy, N. A., Mintairov, S. A., … Mintairov, A. M. (2019). Filling of In(Ga)P/GaInP quantum dot electron states detected by microphotoluminescence. In Journal of Physics: Conference Series (Vol. 1400). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1400/7/077013

Filling of In(Ga)P/GaInP quantum dot electron states detected by microphotoluminescence

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